IPDQ65R080CFD7
制造商:
描述: The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
物料参数
| I[D ] max: | 36.0A |
| I[D ](@25°C) max: | 36.0A |
| I[Dpuls] max: | 107.0A |
| Mounting: | SMT |
| Operating Temperature max: | 150.0°C |
| P[tot] max: | 223.0W |
| Polarity: | N |
| Q[G]: | 50.0nC |
| Q[G](typ @10V): | 50.0nC |
| R[DS (on)] max: | 80.0mΩ |
| R[DS (on)](@10V) max: | 80.0mΩ |
| V[DS] max: | 650.0V |
| V[GS(th)]: | 4.0V |
| Package: | Q-DPAK |
| Budgetary Price €/1k: | 2.27 |