IPAN60R180P7S
制造商:
描述: Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
物料参数
| I[D ] max: | 18.0A |
| I[D ](@25°C) max: | 18.0A |
| I[Dpuls] max: | 53.0A |
| Mounting: | THT |
| P[tot] max: | 26.0W |
| Pin Count: | 3.0Pins |
| Polarity: | N |
| Q[G]: | 25.0nC |
| Q[G](typ @10V): | 25.0nC |
| R[DS (on)] max: | 180.0mΩ |
| R[DS (on)](@10V) max: | 180.0mΩ |
| V[DS] max: | 600.0V |
| V[GS(th)]: | 3.0V |
| Operating Temperature max: | 150.0°C |
| Package: | TO220 FullPAK narrow leads |
| Budgetary Price €/1k: | 0.61 |