IPD19DP10NM
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel MOSFETs in normal level, reducing design complexity in medium and low power applications
物料参数
| I[D ](@25°C) max: | -13.7A |
| I[D ] max: | -13.7A |
| I[Dpuls] max: | -55.0A |
| Mounting: | SMT |
| Operating Temperature max: | 175.0°C |
| P[tot] max: | 83.0W |
| Package: | DPAK (TO-252) |
| Pin Count: | 3.0Pins |
| Polarity: | P |
| Q[G](typ @10V): | -36.0nC |
| Q[G]: | -36.0nC |
| R[DS (on)](@10V) max: | 186.0mΩ |
| R[DS (on)] max: | 186.0mΩ |
| V[DS] max: | -100.0V |
| V[GS(th)] max: | -4.0V |
| Budgetary Price €/1k: | 0.41 |