BSZ086P03NS3G
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.
物料参数
| I[Dpuls] max: | -160.0A |
| R[th]: | 1.8K/W |
| P[tot] max: | 69.0W |
| V[DS] max: | -30.0V |
| C[iss]: | 3190.0pF |
| C[oss]: | 1520.0pF |
| R[DS (on)](@10V) max: | 8.6mΩ |
| Package: | PQFN 3.3 x 3.3 |
| I[D ](@25°C) max: | -40.0A |
| Q[G](typ @10V): | 43.2nC |
| V[GS(th)]: | -2.5V |
| Polarity: | P |
| Operating Temperature min: | -55.0°C |
| Operating Temperature max: | 150.0°C |
| Budgetary Price €/1k: | 0.27 |