SI4435DY
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
物料参数
| Tj: | None°C |
| VGS: | NoneV |
| Moisture Sensitivity Level: | 1 |
| Package: | SO-8 |
| Polarity: | P |
| Qgd: | 8.0nC |
| Mounting: | SMD |
| Ptot(@ TA=25°C): | NoneW |
| RthJA: | NoneK/W |
| VDS: | NoneV |
| RDS (on)(@10V): | NonemΩ |
| RDS (on)(@4.5V): | NonemΩ |
| VGS(th): | NoneV |
| QG(typ @10V): | 40.0nC |
| ID (@25°C): | NoneA |
| Budgetary Price €/1k: | 0.25 |
