IRF9952
制造商:
描述: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
物料参数
| Q[gd](typ): | 1.1nC |
| Q[gd](typ): | 1.8nC |
| R[thJA] max: | 62.5K/W |
| V[DS] max: | 30.0V |
| V[GS] max: | 20.0V |
| P[tot](@ T[A]=25°C) max: | 2.0W |
| Moisture Sensitivity Level: | 1 |
| Polarity: | N+P |
| Package: | SO-8 |
| T[j] max: | 150.0°C |
| R[DS (on)](@10V) max: | 100.0mΩ |
| R[DS (on)](@10V) max: | 250.0mΩ |
| R[DS (on)](@4.5V) max: | 150.0mΩ |
| R[DS (on)](@4.5V) max: | 400.0mΩ |
| V[GS(th)] min: | -1.0V |
| V[GS(th)] min: | 1.0V |
| Q[G](typ @10V): | 6.1nC |
| Q[G](typ @10V): | 6.9nC |
| I[D ](@25°C) max: | 3.5A |
| I[D ](@25°C) max: | -2.3A |
| V[DS] max: | -30.0V |
| Budgetary Price €/1k: | 0.17 |