IRF7907

制造商:

描述: 30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

物料参数

V[DS] max:30.0V
Package:SO-8
P[tot](@ T[A]=25°C) max:2.0W
Q[gd](typ):4.9nC
Moisture Sensitivity Level:1
Polarity:N+N
P[tot] max:2.0W
Q[gd](typ):4.9nC
R[thJA] max:62.5K/W
T[j] max:150.0°C
V[GS] max:20.0V
R[DS (on)](@10V) max:11.8mΩ
R[DS (on)](@10V) max:16.4mΩ
R[DS (on)](@4.5V) max:13.7mΩ
R[DS (on)](@4.5V) max:20.5mΩ
V[GS(th)]:1.8V
I[D ](@25°C) max:9.1A
I[D ](@25°C) max:11.0A
Q[G](typ @4.5V):6.7nC
Q[G](typ @4.5V):14.0nC
Operating Temperature max:150.0°C
Budgetary Price €/1k:0.34