IMBG120R350M1H

制造商:

描述: CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

物料参数

C[iss]:196.0pF
C[oss]:9.0nF
I[D ](@25°C) max:4.7A
Mounting:SMD
Operating Temperature max:175.0°C
P[tot](@ T[A]=25°C) max:65.0W
Package:TO-263-7
Pin Count:7.0Pins
Polarity:N
Q[G]:5.9nC
Q[gd]:1.2nC
Qualification:Industrial
R[DS (on)](@ Tj = 25°C):350.0mΩ
R[thJA] max:62.0K/W
R[thJC] max:2.3K/W
T[j] max:175.0°C
V[DS] max:1200.0V
Technology:CoolSiC™ G1