IMYH200R100M1H

制造商:

描述: CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

物料参数

C[iss]:1215.0pF
C[oss]:40.0pF
I[D ](@25°C) max:26.0A
Mounting:THT
P[tot](@ T[A]=25°C) max:217.0W
Package:PG-TO247-4-PLUS-NT14
Pin Count:4.0Pins
Polarity:N
Q[G]:55.0nC
Q[gd]:5.6nC
Qualification:Industrial
R[DS (on)](@ Tj = 25°C):100.0mΩ
R[thJA] max:62.0K/W
R[thJC] max:0.69K/W
T[j] max:175.0°C
V[DS] max:2000.0V
Operating Temperature max:175.0°C
Technology:CoolSiC™ G1