AIMBG120R160M1

制造商:

描述: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 160mΩ

物料参数

C[iss]:350.0pF
C[oss]:20.0pF
Q[G]:14.0nC
R[thJC] max:1.42K/W
P[tot](@ T[A]=25°C) max:106.0W
Package:TO-263-7
VGSS, off:0
VGSS, on:20
Qualification:Automotive
Operating Temperature max:175.0°C
I[D ](@25°C) max:17.0A
Polarity:N
R[DS (on)](@ Tj = 25°C):160.0mΩ
V[DS] max:1200.0V
Technology:CoolSiC™ G1
Currently planned availability until at least:2033
Launch year:2023