AIMBG120R080M1

制造商:

描述: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 80mΩ

物料参数

I[D ](@25°C) max:30.0A
Operating Temperature max:175.0°C
V[DS] max:1200.0V
Qualification:Automotive
Package:TO-263-7
VGSS, off:0
VGSS, on:20
P[tot](@ T[A]=25°C) max:168.0W
R[thJC] max:0.89K/W
C[iss]:671.0pF
C[oss]:35.0pF
Q[G]:24.0nC
R[DS (on)](@ Tj = 25°C):80.0mΩ
Polarity:N
Technology:CoolSiC™ G1
Currently planned availability until at least:2033
Launch year:2023