IMBG120R060M1H
制造商:
描述: CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package
物料参数
| C[iss]: | 1145.0pF |
| C[oss]: | 53.0pF |
| I[D ](@25°C) max: | 36.0A |
| Mounting: | SMD |
| Operating Temperature max: | 175.0°C |
| P[tot](@ T[A]=25°C) max: | 181.0W |
| Package: | TO-263-7 |
| Pin Count: | 7.0Pins |
| Polarity: | N |
| Q[G]: | 34.0nC |
| Q[gd]: | 7.3nC |
| Qualification: | Industrial |
| R[DS (on)](@ Tj = 25°C): | 60.0mΩ |
| R[thJA] max: | 62.0K/W |
| R[thJC] max: | 0.83K/W |
| T[j] max: | 175.0°C |
| V[DS] max: | 1200.0V |
| Technology: | CoolSiC™ G1 |