IMYH200R050M1H

制造商:

描述: CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

物料参数

C[iss]:2425.0pF
C[oss]:81.0pF
I[D ](@25°C) max:48.0A
Mounting:THT
P[tot](@ T[A]=25°C) max:348.0W
Package:PG-TO247-4-PLUS-NT14
Pin Count:4.0Pins
Polarity:N
Q[G]:82.0nC
Q[gd]:11.1nC
Qualification:Industrial
R[DS (on)](@ Tj = 25°C):50.0mΩ
R[thJA] max:62.0K/W
R[thJC] max:0.43K/W
T[j] max:175.0°C
V[DS] max:2000.0V
Operating Temperature max:175.0°C
Technology:CoolSiC™ G1