IMYH200R024M1H

制造商:

描述: CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

物料参数

C[iss]:4850.0pF
C[oss]:161.0pF
Mounting:THT
I[D ](@25°C) max:89.0A
P[tot](@ T[A]=25°C) max:576.0W
Pin Count:4.0Pins
Polarity:N
Q[G]:137.0nC
Q[gd]:22.0nC
Qualification:Industrial
R[DS (on)](@ Tj = 25°C):24.0mΩ
R[thJA] max:62.0K/W
R[thJC] max:0.26K/W
T[j] max:175.0°C
V[DS] max:2000.0V
Package:PG-TO247-4-PLUS-NT14
Operating Temperature max:175.0°C
Technology:CoolSiC™ G1