IMBG120R026M2H
制造商:
描述: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package
物料参数
| C[iss]: | 1990.0pF |
| C[oss]: | 85.0pF |
| Operating Temperature max: | 175.0°C |
| I[D ](@ T[C]=25°C): | 75.0A |
| Mounting: | SMD |
| P[tot](@ T[A]=25°C) max: | 335.0W |
| Package: | TO-263-7 |
| Pin Count: | 7.0Pins |
| Polarity: | N |
| Q[G]: | 60.0nC |
| Q[gd]: | 16.2nC |
| Qualification: | Industrial |
| R[DS (on)](@ Tj = 25°C): | 25.4mΩ |
| R[thJA] max: | 62.0K/W |
| R[thJC] max: | 0.44K/W |
| T[j] max: | 200.0°C |
| V[DS] max: | 1200.0V |
| Technology: | CoolSiC™ G2 |