AIMBG120R020M1

制造商:

描述: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 20mΩ

物料参数

VGSS, off:0
VGSS, on:20
I[D ](@25°C) max:104.0A
Operating Temperature max:175.0°C
V[DS] max:1200.0V
Qualification:Automotive
R[DS (on)](@ Tj = 25°C):19.0mΩ
Package:TO-263-7
P[tot](@ T[A]=25°C) max:468.0W
R[thJC] max:0.32K/W
C[iss]:2667.0pF
C[oss]:126.0pF
Q[G]:82.0nC
Polarity:N
Technology:CoolSiC™ G1
Currently planned availability until at least:2033
Launch year:2023