IMBG120R017M2H

制造商:

描述: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

物料参数

C[iss]:2910.0pF
C[oss]:126.0pF
I[D ](@ T[C]=25°C) max:107.0A
Operating Temperature max:175.0°C
Mounting:SMD
P[tot](@ T[A]=25°C) max:470.0W
Package:TO-263-7
Pin Count:7.0Pins
Polarity:N
Q[G]:89.0nC
Q[gd]:23.9nC
Qualification:Industrial
R[DS (on)](@ Tj = 25°C):17.1mΩ
R[thJA] max:62.0K/W
R[thJC] max:0.32K/W
T[j] max:200.0°C
V[DS] max:1200.0V
Technology:CoolSiC™ G2