IMBG120R008M2H
制造商:
描述: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package
物料参数
| C[iss]: | 6380.0pF |
| C[oss]: | 279.0pF |
| I[D ](@ T[C]=25°C) max: | 189.0A |
| Operating Temperature max: | 175.0°C |
| Mounting: | SMD |
| P[tot](@ T[A]=25°C) max: | 800.0W |
| Package: | TO-263-7 |
| Pin Count: | 7.0Pins |
| Polarity: | N |
| Q[G]: | 195.0nC |
| Q[gd]: | 53.0nC |
| Qualification: | Industrial |
| R[DS (on)](@ Tj = 25°C): | 7.7mΩ |
| R[thJA] max: | 62.0K/W |
| R[thJC] max: | 0.19K/W |
| T[j] max: | 200.0°C |
| V[DS] max: | 1200.0V |
| Technology: | CoolSiC™ G2 |