IKB30N65ES5
制造商:
描述: 650 V, 30 A IGBT with anti-parallel diode in TO-263 package
物料参数
| E[off](Hard Switching): | 0.32mJ |
| E[on]: | 0.56mJ |
| I[C](@ 100°) max: | 39.5A |
| I[C](@ 25°) max: | 62.0A |
| I[Cpuls] max: | 120.0A |
| I[F] max: | 39.5A |
| I[Fpuls] max: | 120.0A |
| I[rrm]: | 18.0A |
| P[tot] max: | 188.0W |
| Package: | D2PAK (TO-263-3) |
| Q[Gate]: | 70.0nC |
| Q[rr]: | 600.0nC |
| Switching Frequency max: | 40.0kHz |
| Technology: | IGBT TRENCHSTOP™ 5 |
| V[CE(sat)]: | 1.35V |
| V[CE] max: | 650.0V |
| V[F]: | 1.45V |
| t[d(off)]: | 124.0ns |
| t[d(on)]: | 17.0ns |
| t[r]: | 12.0ns |
| t[f]: | 30.0ns |
| Switching Frequency: | TRENCHSTOP™ 5 10-40 kHz |
| R[G]: | 13.0Ω |