AIKW50N60CT

制造商:

物料参数

I[rrm]:27.7A
E[off](Soft Switching):1.4mJ
E[on]:1.2mJ
I[C](@ 100°) max:50.0A
I[C](@ 25°) max:80.0A
I[Cpuls] max:150.0A
I[F] max:80.0A
I[Fpuls] max:150.0A
V[F]:1.65V
Q[Gate]:310.0nC
Q[rr]:1800.0nC
Switching Frequency:0-30 KHz
Type:IGBT + Diode
V[CE(sat)]:1.5V
V[CE] max:600.0V
t[d(off)]:299.0ns
t[d(on)]:26.0ns
t[f]:29.0ns
t[r]:29.0ns
P[tot] max:333.0W
Voltage Class max:600.0V
E[off](Hard Switching):1.85mJ
Co-pack diode technology:EMCON3
Reflow Solderable:No
Package:TO-247-3
|Product Group|:IGBT with Anti-Parallel Diode
Technology:IGBT TRENCHSTOP™
Currently planned availability until at least:2033
Launch year:2017
Budgetary Price €/1k:3.25