IGB20N65S5

制造商:

描述: 650 V, 20 A IGBT with anti-parallel diode in TO263 package

物料参数

E[off](Hard Switching):0.08mJ
E[on]:0.19mJ
I[C](@ 25°) max:40.0A
I[C](@ 100°) max:28.0A
I[Cpuls] max:80.0A
P[tot] max:125.0W
Package:D2PAK (TO-263-3)
Q[Gate]:48.0nC
Switching Frequency max:20.0kHz
Switching Frequency:TRENCHSTOP™ 2-20 kHz
Technology:IGBT TRENCHSTOP™ 5
V[CE(sat)]:1.35V
V[CE] max:650.0V
t[d(off)]:115.0ns
t[d(on)]:13.0ns
t[f]:22.0ns
t[r]:14.0ns
R[G]:20.0Ω