IKB30N65EH5

制造商:

描述: 650 V, 30 A IGBT with anti-parallel diode in TO-263 package

物料参数

E[off](Hard Switching):0.3mJ
E[on]:0.87mJ
I[C](@ 100°) max:35.0A
I[C](@ 25°) max:55.0A
I[Cpuls] max:120.0A
I[F] max:39.5A
I[Fpuls] max:90.0A
I[rrm]:12.0A
P[tot] max:188.0W
Package:D2PAK (TO-263-3)
Q[Gate]:70.0nC
Q[rr]:500.0nC
Switching Frequency max:100.0kHz
Technology:IGBT TRENCHSTOP™ 5
V[CE(sat)]:1.65V
V[CE] max:650.0V
V[F]:1.45V
t[d(off)]:159.0ns
t[d(on)]:24.0ns
t[r]:28.0ns
t[f]:25.0ns
Switching Frequency:TRENCHSTOP™5 30-100 kHz
R[G]:22.0Ω