物料参数
| Type: | IGBT + Diode |
| Switching Frequency: | 7kHz - 15kHz |
| V[CE] max: | 750.0V |
| I[Cpuls] max: | 600.0A |
| P[tot] max: | 1071.0W |
| V[CE(sat)]: | 1.3V |
| E[on]: | 15.3mJ |
| t[d(on)]: | 89.0ns |
| t[r]: | 120.0ns |
| t[d(off)]: | 266.0ns |
| t[f]: | 46.0ns |
| Q[Gate]: | 1256.0nC |
| I[F] max: | 200.0A |
| I[Fpuls] max: | 600.0A |
| V[F]: | 1.8V |
| Q[rr]: | 4700.0nC |
| I[rrm]: | 41.0A |
| I[C](@ 100°) max: | 200.0A |
| I[C](@ 25°) max: | 200.0A |
| Voltage Class max: | 750.0V |
| Co-pack diode technology: | EMCON3 |
| Reflow Solderable: | No |
| Package: | TO-247-3 |
| |Product Group|: | IGBT with Anti-Parallel Diode |
| Technology: | EDT2 |
| Currently planned availability until at least: | 2033 |
| Launch year: | 2022 |
