IKFW50N65DH5

制造商:

描述: 650 V IGBT with anti-parallel diode in TO-247 package

物料参数

E[off](Hard Switching):0.63mJ
E[on]:1.46mJ
I[F] max:40.0A
I[Fpuls] max:160.0A
P[tot](@ T[A]=25°C) max:124.0W
Q[Gate]:95.0nC
Q[rr]:0.55nC
Technology:IGBT TRENCHSTOP™ 5
t[d(off)]:131.0ns
t[d(on)]:23.0ns
t[f]:20.0ns
V[CE(sat)](Tvj=25°C typ):1.8V
V[CE] max:650.0V
V[F](Tvj=25°C typ):1.5V
Package:PG-HSIP247-3-1
R[G]:12.2Ω
I[C](@ 25°) max:59.0A