IKZA50N65SS5
制造商:
描述: 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
物料参数
| E[off](Hard Switching): | 0.52mJ |
| E[on]: | 0.23mJ |
| I[C](@ 25°) max: | 80.0A |
| I[C](@ 100°) max: | 60.5A |
| I[Cpuls] max: | 200.0A |
| I[F] max: | 38.5A |
| I[Fpuls] max: | 150.0A |
| P[tot] max: | 274.0W |
| Package: | TO-247-4 |
| Q[Gate]: | 110.0nC |
| Switching Frequency: | TRENCHSTOP™5 10-30 kHz |
| Switching Frequency max: | 30.0kHz |
| Technology: | IGBT TRENCHSTOP™ 5 |
| Technology: | Silicon Carbide Schottky Diode |
| V[CE(sat)]: | 1.65V |
| V[CE] max: | 650.0V |
| V[F]: | 1.35V |
| V[GE(th)]: | 4.0V |
| t[d(off)]: | 140.0ns |
| t[d(on)]: | 19.0ns |
| t[f]: | 19.0ns |
| t[r]: | 9.0ns |
| R[G]: | 9.0Ω |