IGB50N65H5

制造商:

描述: 650 V, 50 A IGBT with anti-parallel diode in TO-263 package

物料参数

E[off](Hard Switching):0.18mJ
E[on]:1.59mJ
I[C](@ 25°) max:80.0A
I[C](@ 100°) max:53.7A
I[Cpuls] max:150.0A
P[tot] max:105.0W
Package:PG-TO263-3
Q[Gate]:120.0nC
Switching Frequency max:20.0kHz
Switching Frequency:TRENCHSTOP™ 2-20 kHz
Technology:IGBT TRENCHSTOP™ 5
V[CE(sat)]:1.35V
V[CE] max:650.0V
t[d(off)]:117.0ns
t[d(on)]:12.0ns
t[f]:30.0ns
t[r]:14.0ns
R[G]:12.0Ω