IKW50N65RH5
制造商:
描述: 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
物料参数
| E[off](Hard Switching): | 0.18mJ |
| E[on]: | 0.23mJ |
| I[C](@ 100°) max: | 56.0A |
| I[C](@ 25°) max: | 80.0A |
| I[Cpuls] max: | 200.0A |
| I[F] max: | 22.8A |
| I[Fpuls] max: | 75.0A |
| P[tot] max: | 305.0W |
| Package: | TO-247-3 |
| Q[Gate]: | 120.0nC |
| Switching Frequency: | TRENCHSTOP™5 40-100 kHz |
| Switching Frequency max: | 100.0kHz |
| Technology: | IGBT TRENCHSTOP™ 5 |
| Technology: | Silicon Carbide Schottky Diode |
| V[F]: | 1.35V |
| V[CE] max: | 650.0V |
| V[CE(sat)]: | 1.65V |
| t[d(off)]: | 180.0ns |
| t[d(on)]: | 22.0ns |
| t[f]: | 18.0ns |
| t[r]: | 7.0ns |
| R[G]: | 12.0Ω |