IKP39N65ES5

制造商:

描述: 650 V, 39 A IGBT with anti-parallel diode in TO-220 package

物料参数

E[off](Hard Switching):0.4mJ
E[on]:0.8mJ
I[C](@ 100°) max:39.0A
I[C](@ 25°) max:62.0A
I[Cpuls] max:120.0A
I[F] max:40.0A
I[Fpuls] max:120.0A
I[rrm]:19.0A
P[tot] max:188.0W
Package:TO-220-3
Q[Gate]:70.0nC
Q[rr]:850.0nC
V[CE] max:650.0V
V[F]:1.65V
V[CE(sat)]:1.45V
Technology:IGBT TRENCHSTOP™ 5
t[f]:25.0ns
t[r]:30.0ns
t[d(off)]:120.0ns
t[d(on)]:20.0ns
Switching Frequency max:30.0kHz
R[G]:12.8Ω