D711N65T

制造商:

物料参数

V[RRM] max:6500.0V
I[(FSM)] max:10500.0A
I[FAVM]/T[c]:790/100 (180 ° el sin)
Configuration:Rectifier Diodes
Housing:Disc dia 58mm height 26mm / Ceramic
V[RRM] [V]:6500.0
I[FAVM]/T[C] [A/°C](@180° el sin):790/100
I[FSM] [A](@10ms, Tvj max):10500.0
∫I2dt [A²s · 103](@10ms, Tvj max):550.0
V[F]/I[F] [V/kA](@Tvj max):1.77/1.2
V[T0] [V](@T[vj max]) max:0.84
r[T] [mΩ](@T[vj max]) max:0.87
R[thJC] [K/kW](@180° el sin) max:31.5
T[vj] [°C] max:160.0
Clamping force [kn] max:16.0