D1961SH45T

制造商:

物料参数

V[RRM] max:4500.0V
I[(FSM)] max:40000.0A
Configuration:IGCT/IGBT - Freewheeling Diodes
Housing:Disc dia 120mm height 26mm / Ceramic
V[RRM] [V]:4500.0
I[FAVM]/T[C] [A/°C](@180° el sin):1830/85
I[FSM] [A](@10ms, Tvj max):40000.0
∫I2dt [A²s · 103](@10ms, Tvj max):8000.0
V[F]/I[F] [V/kA](@Tvj max):2.5/2.5
V[T0] [V](@T[vj max]) max:1.25
V[R](D) [kV](@TC = 25°):2.8
r[T] [mΩ](@T[vj max]) max:0.5
Q[r] [mAs](@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max:12.0
I[RM] [A](@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max:2250.0
R[thJC] [K/kW](@DC) max:7.5
T[vj] [°C] max:140.0
Clamping force [kn] max:52.0