D921S45T

制造商:

物料参数

V[RRM] max:4500.0V
I[(FSM)] max:28000.0A
Configuration:GTO - Freewheeling Diodes
Housing:Disc dia 100mm height 26mm / Ceramic
V[RRM] [V]:4500.0
I[FAVM]/T[C] [A/°C](@180° el sin):1380/85
I[FSM] [A](@10ms, Tvj max):28000.0
∫I2dt [A²s · 103](@10ms, Tvj max):2650.0
V[F]/I[F] [V/kA](@Tvj max):2.6/2.5
V[T0] [V](@T[vj max]) max:1.4
r[T] [mΩ](@T[vj max]) max:0.48
I[RM] [A](@IF = IFAVM, di/dt = 50 A/µs) max:800.0
R[thJC] [K/kW](@180° el sin) max:12.5
T[vj] [°C] max:140.0
Clamping force [kn] max:45.0