D1131SH65T
制造商:
物料参数
| V[RRM] max: | 6500.0V |
| I[(FSM)] max: | 22000.0A |
| Configuration: | IGCT/IGBT - Freewheeling Diodes |
| Housing: | Disc dia 120mm height 26mm / Ceramic |
| V[RRM] [V]: | 6500.0 |
| I[FAVM]/T[C] [A/°C](@180° el sin): | 1100/85 |
| I[FSM] [A](@10ms, Tvj max): | 22000.0 |
| V[F]/I[F] [V/kA](@Tvj max): | 4,2/2,5 |
| V[T0] [V](@T[vj max]) max: | 2.19 |
| V[R](D) [kV](@TC = 25°): | 3.2 |
| r[T] [mΩ](@T[vj max]) max: | 1.364 |
| Q[r] [mAs](@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max: | 3.5 |
| I[RM] [A](@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max: | 1200.0 |
| R[thJC] [K/kW](@DC) max: | 7.5 |
| T[vj] [°C] max: | 140.0 |
| Clamping force [kn] max: | 52.0 |
| ∫I2dt [A²s · 103](@10ms, Tvj max): | 2420.0 |