物料参数
| Configuration: | Single Rectifier Diode |
| V[DRM] / V[RRM] [V]: | 1800.0 |
| I[FAVM]/T[C] / I[TAVM]/T[C] [A/°C](@180° el sin): | 1100/100 |
| I[FSM] / I[TSM] [A](@10ms, Tvj max): | 35000.0 |
| ∫I2dt [A²s · 103](@10ms, Tvj max): | 6125.0 |
| V[T0] [V](@T[vj max]): | 0.75 |
| r[T] [mΩ](@T[vj max]): | 0.073 |
| R[thJC] [K/W](@180° el sin): | 0.045 |
| Housing: | 70 mm |
| Product Line: | Power Block |
| T[vj] [°C]: | 150.0 |
