IQD005N04NM6CG
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on)
物料参数
| I[D ](@25°C) max: | 610.0A |
| I[Dpuls] max: | 2440.0A |
| Operating Temperature max: | 175.0°C |
| Package: | PQFN 5x6 Source-Down |
| Polarity: | N |
| Q[G](typ @10V): | 129.0nC |
| R[DS (on)](@10V) max: | 0.47mΩ |
| V[DS] max: | 40.0V |
| V[GS(th)]: | 2.3V |
| Special Features: | Center-Gate |
| Budgetary Price €/1k: | 1.43 |