IQFH55N04NM6
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on)
物料参数
| I[Dpuls] max: | 1804.0A |
| Operating Temperature max: | 175.0°C |
| Package: | PQFN 8x6 |
| Polarity: | N |
| Q[G](typ @10V): | 118.0nC |
| R[DS (on)](@10V) max: | 0.55mΩ |
| V[DS] max: | 40.0V |
| V[GS(th)]: | 2.3V |
| I[D ](@25°C) max: | 451.0A |
| Budgetary Price €/1k: | 1.9 |