IQE013N04LM6CG
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on)
物料参数
| I[D ](@25°C) max: | 205.0A |
| I[Dpuls] max: | 820.0A |
| P[tot] max: | 107.0W |
| Package: | PQFN 3.3x3.3 Source-Down |
| Polarity: | N |
| Q[G](typ @10V): | 41.0nC |
| Q[G](typ @4.5V): | 20.0nC |
| R[DS (on)](@10V) max: | 1.35mΩ |
| R[DS (on)](@4.5V) max: | 1.9mΩ |
| V[DS] max: | 40.0V |
| V[GS(th)]: | 1.6V |
| Operating Temperature max: | 175.0°C |
| Special Features: | Center-Gate |
| Budgetary Price €/1k: | 0.75 |