IQE030N06NM5CGSC

制造商:

描述: OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

物料参数

I[D ](@25°C) max:132.0A
I[D ] max:132.0A
I[Dpuls] max:528.0A
Operating Temperature max:175.0°C
P[tot] max:100.0W
Package:PQFN 3.3x3.3 Source-Down
Polarity:N
Q[G](typ @10V):39.0nC
Q[G]:39.0nC
R[DS (on)](@10V) max:3.0mΩ
R[DS (on)] max:3.0mΩ
V[DS] max:60.0V
V[GS(th)]:2.8V
Special Features:Center-Gate Dual-Side Cooling
Budgetary Price €/1k:1.0