IPTG007N06NM5
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance
物料参数
| I[D ](@25°C) max: | 454.0A |
| I[Dpuls] max: | 1816.0A |
| Mounting: | SMT |
| P[tot] max: | 375.0W |
| Package: | TOLG (HSOG-8) |
| Pin Count: | 8.0Pins |
| Polarity: | N |
| Q[G](typ @10V): | 216.0nC |
| R[DS (on)](@10V) max: | 0.75mΩ |
| V[DS] max: | 60.0V |
| V[GS(th)]: | 2.8V |
| Operating Temperature max: | 175.0°C |
| Battery voltage: | 24-36 V |
| Budgetary Price €/1k: | 2.61 |
