IPTG025N08NM5
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET in TOLG package for higher thermal cycling on board performance
物料参数
| I[D ](@25°C) max: | 184.0A |
| Package: | TOLG (HSOG-8) |
| Polarity: | N |
| Q[G](typ @10V): | 70.0nC |
| R[DS (on)](@10V) max: | 2.5mΩ |
| V[DS] max: | 80.0V |
| V[GS(th)]: | 3.0V |
| Operating Temperature max: | 175.0°C |
| Budgetary Price €/1k: | 1.72 |
