ISZ080N10NM6
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 100 V Normal Level in PQFN 3.3x3.3 package
物料参数
| I[D ](@25°C) max: | 75.0A |
| I[D ] max: | 75.0A |
| I[Dpuls] max: | 300.0A |
| Mounting: | SMT |
| P[tot] max: | 100.0W |
| Package: | PQFN 3.3 x 3.3 Fused Lead |
| Pin Count: | 8.0Pins |
| Polarity: | N |
| Q[G](typ @10V): | 19.0nC |
| Q[G]: | 19.0nC |
| R[DS (on)](@10V) max: | 8.04mΩ |
| R[DS (on)] max: | 8.04mΩ |
| V[DS] max: | 100.0V |
| V[GS(th)]: | 2.8V |
| Operating Temperature max: | 175.0°C |
| Budgetary Price €/1k: | 0.57 |