IPTC017N12NM6
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET normal level 120 V in TOLT package
物料参数
| I[D ](@25°C) max: | 331.0A |
| I[Dpuls] max: | 1324.0A |
| Operating Temperature max: | 175.0°C |
| P[tot] max: | 395.0W |
| Package: | TOLT (HDSOP-16) |
| Polarity: | N |
| Q[G](typ @10V): | 113.0nC |
| R[DS (on)](@10V) max: | 1.7mΩ |
| V[DS] max: | 120.0V |
| V[GS(th)]: | 3.1V |
| Battery voltage: | 48-72 V |
| Budgetary Price €/1k: | 3.26 |