BTS3110N

供应商:

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

物料参数

EAS/Avalanche Energy:150.0mJ
ID:1.4A
ID(lim):NoneA
Load Current:1.4A
Mounting:SMT
Ptot:NoneW
VDS:NoneV
Control Interface:Discrete
IL(nom):1.4A
Recommended Operating Voltage:NoneV
Operating Temperature:None°C
EAS(Energy capability):150.0mJ
toff(Turn OFF time):Noneµs
ton(Turn ON time):Noneµs
Family:Classic HITFET™
Classification:-
Channels:1.0
RDS (on)(@ Tj = 25°C):190.0mΩ
RDS (on)(@ Tj = 150°C):NonemΩ
Diagnostics:-
Protection strategy:Latch
Nominal Load Current per channel:1.4A
IL(Short Circuit Current):5.0A
价格梯度 价格
1+¥6.0222
包装: 库存:27