BTS3118N
供应商:
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions
物料参数
| EAS/Avalanche Energy: | 250.0mJ |
| ID: | 2.17A |
| ID(lim): | NoneA |
| Load Current: | 2.17A |
| Mounting: | SMT |
| Ptot: | NoneW |
| VDS: | NoneV |
| Control Interface: | Discrete |
| IL(nom): | 2.17A |
| Recommended Operating Voltage: | NoneV |
| Operating Temperature: | None°C |
| EAS(Energy capability): | 250.0mJ |
| toff(Turn OFF time): | Noneµs |
| ton(Turn ON time): | Noneµs |
| Family: | Classic HITFET™ |
| Classification: | - |
| Channels: | 1.0 |
| RDS (on)(@ Tj = 25°C): | 90.0mΩ |
| RDS (on)(@ Tj = 150°C): | NonemΩ |
| Diagnostics: | - |
| Protection strategy: | Latch |
| Nominal Load Current per channel: | 2.17A |
| IL(Short Circuit Current): | 10.0A |
| 价格梯度 | 价格 |
|---|---|
| 1+ | ¥7.3006 |
| 包装： | 库存：181 |