BTS3134D

供应商:

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

物料参数

EAS/Avalanche Energy:3000.0mJ
ID:3.5A
ID(lim):NoneA
Load Current:3.5A
Mounting:SMT
Ptot:NonemW
VDS:NoneV
Control Interface:Discrete
IL(nom):3.5A
Recommended Operating Voltage:NoneV
Operating Temperature:None°C
EAS(Energy capability):3000.0mJ
toff(Turn OFF time):Noneµs
ton(Turn ON time):Noneµs
Family:Classic HITFET™
Classification:-
Channels:1.0
RDS (on)(@ Tj = 25°C):45.0mΩ
RDS (on)(@ Tj = 150°C):NonemΩ
Diagnostics:-
Protection strategy:Latch
Nominal Load Current per channel:3.5A
IL(Short Circuit Current):18.0A
无库存