IPB60R080P7
制造商:
描述: Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
物料参数
| C[iss]: | 2180.0pF |
| C[oss]: | 37.0pF |
| I[Dpuls] max: | 110.0A |
| Mounting: | SMT |
| P[tot] max: | 129.0W |
| Pin Count: | 3.0Pins |
| Polarity: | N |
| Q[gd]: | 16.0nC |
| R[th]: | 0.97K/W |
| R[thJA] max: | 62.0K/W |
| R[thJC] max: | 0.97K/W |
| V[DS] max: | 600.0V |
| I[D ] max: | 37.0A |
| I[D ](@25°C) max: | 37.0A |
| Q[G]: | 51.0nC |
| Q[G](typ @10V): | 51.0nC |
| R[DS (on)] max: | 80.0mΩ |
| R[DS (on)](@10V) max: | 80.0mΩ |
| Special Features: | price/performance |
| V[GS(th)]: | 3.5V |
| Operating Temperature max: | 150.0°C |
| Package: | D2PAK |
| Budgetary Price €/1k: | 1.68 |