IPB35N10S3L-26
制造商:
描述: 100V, N-Ch, 26.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T
物料参数
| I[Dpuls] max: | 140.0A |
| R[thJC] max: | 2.1K/W |
| P[tot] max: | 71.0W |
| Qualification: | Automotive |
| Package: | D2PAK (PG-TO263-3) |
| V[DS] max: | 100.0V |
| R[DS (on)](@10V) max: | 26.3mΩ |
| Polarity: | N |
| I[D ](@25°C) max: | 35.0A |
| Technology: | OptiMOS™-T |
| Operating Temperature max: | 175.0°C |
| Q[G](typ @10V): | 30.0nC |
| Q[G](typ @10V) max: | 39.0nC |
| V[GS(th)]: | 1.7V |
| Currently planned availability until at least: | 2030 |
| Launch year: | 2010 |
| Budgetary Price €/1k: | 0.75 |
| Budgetary Price €/1k: | 0.75 |