IPD60N10S4-12
制造商:
描述: 100V, N-Ch, 12.2 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2
物料参数
| I[Dpuls] max: | 240.0A |
| R[thJC] max: | 1.6K/W |
| P[tot] max: | 94.0W |
| Qualification: | Automotive |
| Package: | DPAK (PG-TO252-3) |
| V[DS] max: | 100.0V |
| R[DS (on)](@10V) max: | 12.2mΩ |
| Polarity: | N |
| I[D ](@25°C) max: | 60.0A |
| Technology: | OptiMOS™-T2 |
| Operating Temperature max: | 175.0°C |
| Q[G](typ @10V): | 26.0nC |
| Q[G](typ @10V) max: | 34.0nC |
| V[GS(th)]: | 2.7V |
| Currently planned availability until at least: | 2032 |
| Launch year: | 2014 |
| Budgetary Price €/1k: | 0.47 |