IPG16N10S4-61A
制造商:
描述: 100V, Dual N-Ch, 61 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2
物料参数
| I[Dpuls] max: | 64.0A |
| R[thJC] max: | 5.2K/W |
| P[tot] max: | 29.0W |
| Qualification: | Automotive |
| Package: | dual SS08 (PG-TDSON-8) |
| V[DS] max: | 100.0V |
| R[DS (on)](@10V) max: | 61.0mΩ |
| Polarity: | N+N |
| I[D ](@25°C) max: | 16.0A |
| Technology: | OptiMOS™-T2 |
| Operating Temperature max: | 175.0°C |
| Q[G](typ @10V): | 5.4nC |
| Q[G](typ @10V) max: | 9.5nC |
| Currently planned availability until at least: | 2030 |
| Launch year: | 2013 |
| Budgetary Price €/1k: | 0.33 |
| V[GS(th)] max: | 3.5V |