IPG20N06S4L-11
制造商:
描述: 60V, Dual N-Ch, 11.2 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2
物料参数
| I[Dpuls] max: | 80.0A |
| R[thJC] max: | 2.3K/W |
| P[tot] max: | 65.0W |
| Qualification: | Automotive |
| Package: | dual SS08 (PG-TDSON-8) |
| V[DS] max: | 60.0V |
| R[DS (on)](@10V) max: | 11.2mΩ |
| Polarity: | N+N |
| I[D ](@25°C) max: | 20.0A |
| Technology: | OptiMOS™-T2 |
| Operating Temperature max: | 175.0°C |
| Q[G](typ @10V): | 41.0nC |
| Q[G](typ @10V) max: | 53.0nC |
| Currently planned availability until at least: | 2033 |
| Launch year: | 2011 |
| Budgetary Price €/1k: | 0.56 |
| V[GS(th)]: | 1.7V |