AUIRLR3110Z
制造商:
描述: Designed for Automotive applications, HEXFET® Power MOSFET utilizes processing techniques to achieve extremely low on-resistance per silicon area
物料参数
| T[j] max: | 175.0°C |
| I[D ](@ T[C]=100°C) max: | 45.0A |
| I[D ](@ T[C]=25°C) max: | 63.0A |
| Moisture Sensitivity Level: | 1 |
| Package: | DPAK (TO-252) |
| Polarity: | N |
| Q[gd]: | 15.0nC |
| R[DS (on)](@10V) max: | 14.0mΩ |
| R[DS (on)] max: | 14.0mΩ |
| R[thJC] max: | 1.05K/W |
| Technology: | Trench Mosfet |
| V[GS] max: | 16.0V |
| I[D ] max: | 45.0A |
| Mounting: | SMD |
| P[tot] max: | 140.0W |
| Qualification: | Automotive |
| R[DS (on)](@4.5V) max: | 16.0mΩ |
| V[DS] max: | 100.0V |
| Operating Temperature max: | 175.0°C |
| I[D ](@25°C) max: | 42.0A |
| V[GS(th)] max: | 2.5V |
| Q[G](typ @10V): | 34.0nC |
| Q[G](typ @10V) max: | 48.0nC |